Computational Surface Science and Catalysis Group

Semiconductors

  1. “Exploring Driving Forces for Length Growth in Graphene Nanoribbons During Chemical Vapor Deposition of Hydrocarbons on Ge(001) via Kinetic Monte Carlo Simulations”, F. Göltl, E. A. Murray, B. W. J. Chen, R. M. Jacobberger, M. S. Arnold, and M. Mavrikakis, Applied Surface Science 527, 146784 (2020). [DOI]

  2. “Anisotropic Synthesis of Armchair Graphene Nanoribbon Arrays from Sub-5 nm Seeds at Variable Pitches on Germanium”, A. J. Way, E. A. Murray, F. Göltl, V. Saraswat, R. M. Jacobberger, M. Mavrikakis, M. S. Arnold, Journal of Physical Chemistry Letters 10, 4266 (2019). [DOI]

  3. “Alignment of semiconducting graphene nanoribbons on vicinal Ge(001)”, R. M. Jacobberger, E. A. Murray, M. Fortin-Deschênes, F. Göltl, W. A. Behn, Z. J. Krebs, P. L. Levesque, D. E. Savage, C. Smoot, M. G. Lagally, P. Desjardins, R. Martel, V. Brar, O. Moutanabbir, M. Mavrikakis, M. S. Arnold, Nanoscale 11, 4864 (2019). [DOI]

  4. “Distinguishing attosecond electron–electron scattering and screening in transition metals”, C. Chen, Z. Tao, A. Carr, P. Matyba, T. Szilvási, S. Emmerich, M. Piecuch, M. Keller, D. Zusin, S. Eich, M. Rollinger, W. You, S. Mathias, U. Thumm, M. Mavrikakis, M. Aeschlimann, P. M. Oppeneer, H. Kapteyn, and M. Murnane Proceedings of the National Academy of Sciences of the United States of America 114, E5300 (2017). [DOI]

  5. “Direct time-domain observation of attosecond final-state lifetimes in photoemission from solids”, Z. Tao, C. Chen, T. Szilvási, M. Keller, M. Mavrikakis, H. Kapteyn, and M. Murnane Science 353, 62 (2016). [DOI]

    6. Read a perspectives paper on publication # 158 by Prof. U. Bovensiepen and Dr. M. Ligges

  6. “Controlling the electronic structure of graphene using surface-adsorbate interactions”, P. Matyba, A. Carr, C. Chen, D. L. Miller, G. Peng, S. Mathias, M. Mavrikakis, D. S. Dessau, M. W. Keller, H. C. Kapteyn, and M. Murnane Physical Review B 92, 041407(R) (2015). [DOI]

  7. “The nature of the Fe-graphene interface at the nanometer level”, M. Cattelan, G. W. Peng, E. Cavaliere, L. Artiglia, A. Barinov, L. T. Roling, M. Favaro, I. Píš, S. Nappini, E. Magnano, F. Bondino, L. Gavioli, S. Agnoli, M. Mavrikakis and G. Granozzi, Nanoscale 7, 2450 (2015). [DOI]

  8. “Molecular-Scale Structure of a Nitrobenzene Monolayer on Si(001)”, G. W. Peng, S. Seo, R. E. Ruther, R. J. Hamers, M. Mavrikakis, P. G. Evans, Journal of Physical Chemistry C 115, 3011 (2011). [DOI]

  9. “Conductance of Conjugated Molecular Wires: Length Dependence, Anchoring Groups, and Band Alignment”, G. Peng, M. Strange, K. S. Thygesen, M. Mavrikakis, Journal of Physical Chemistry C 113, 20967 (2009). [DOI]

  10. “Effectiveness of in Situ NH3 Annealing Treatments for the Removal of Oxygen from GaN Surfaces”, L. C. Grabow, J. J. Uhlrich, T. F. Kuech, M. Mavrikakis, Surface Science 603, 387 (2009). [DOI]

  11. “Molecular-Scale Structural Distortion near Vacancies in Pentacene”, S. Seo, L. C. Grabow, M. Mavrikakis, R. J. Hamers, N. J. Thompson, P. G. Evans, Applied Physics Letters 92, 153313 (2008). [DOI]

  12. “Practical Surface Treatments and Surface Chemistry of N-Type and P-Type GaN”, J. J. Uhlrich, L. C. Grabow, M. Mavrikakis, T. F. Kuech, Journal of Electronic Materials 37, 439 (2008). [DOI]

  13. “A Theoretical Comparative Study of the Surfactant Effect of Sb and Bi on GaN Growth”, A. A. Gokhale, T. F. Kuech, M. Mavrikakis, Journal of Crystal Growth 303, 493 (2007). [DOI]

  14. “Surfactant Effect of Sb on GaN Growth”, A. A. Gokhale, T. F. Kuech, M. Mavrikakis, Journal of Crystal Growth 285, 146 (2005). [DOI]

  15. “Modifications of the Electronic Structure of GaSb Surface by Chalcogen Atoms: S, Se, and Te”, Z. Y. Liu, A. A. Gokhale, M. Mavrikakis, D. A. Saulys, T. F. Kuech, Journal of Applied Physics 96, 4302 (2004). [DOI]

  16. “The Addition of Sb as a Surfactant to GaN Growth by Metal Organic Vapor Phase Epitaxy”, L. Zhang, H. F. Tang, J. Schieke, M. Mavrikakis, T. F. Kuech, Journal of Applied Physics 92, 2304 (2002). [DOI]

  17. “Influence of Bi Impurity as a Surfactant During the Growth of GaN by Metalorganic Vapor Phase Epitaxy”, L. Zhang, H. F. Tang, J. Schieke, M. Mavrikakis, T. F. Kuech, Journal of Crystal Growth 242, 302 (2002). [DOI]

  18. “Hydrogen Energetics in Alpha-Si : H as Determined by a Combination of Mean-Field Modeling and Experimental Evolution Data”, A. J. Franz, M. Mavrikakis, J. L. Gland, Physical Review B 57, 3927 (1998). [DOI]